Method of producing bonded wafer
AssigneeSumco Corporation
InventorsTatsumi Kusaba, Akihiko Endo
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Abstract
In the production of a bonded wafer, a wafer for active layer after a heat treatment for bonding reinforcement followed by bonding is thinned to a given thickness by a surface polishing or an etching and then a wafer for support layer is subjected to both a minor-surface beveling and a terrace processing simultaneously.
Claims2
A method of producing a bonded wafer, which comprises bonding a wafer for active layer to a wafer for support layer, conducting a heat treatment for bonding reinforcement and then thinning the wafer for active layer, wherein the wafer for active layer after the heat treatment for bonding reinforcement is thinned to a thickness of 1 to 20 μm by a surface polishing or an etching and then the wafer for support layer is subjected to both a minor-surface beveling and a terrace processing simultaneously.
Dependencies are inferred from the claim text.