Method for fabricating semiconductor device

A method for fabricating a semiconductor device, the method comprising:

• forming an isolation layer defining an active region over a substrate;
• forming a first conductive layer over the substrate including the isolation layer;
• forming a hard mask pattern exposing a recess region over the first conductive layer;
• etching the first conductive layer and the substrate using the hard mask pattern as an etch mask to form an initial first conductive pattern and a recess;
• selectively etching the initial first conductive pattern to form a final first conductive pattern over the active region defined on both sides of the recess;
• forming insulation spacers on a sidewall of the final first conductive pattern;
• forming a conductive layer for a gate electrode and a gate hard mask layer over the resulting structure including the recess and the final first conductive pattern;
• and
• patterning the gate hard mask layer and the conductive layer for the gate electrode to form a gate in a gate region of the substrate.