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US 2008/0188055 A1Published application
Metal-insulator-metal structure and method of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYu-Jen Wang, Chia-Shiung Tsai, Yeur-Luen Tu, Lan-Lin Chao, Chih-Ta Wu, Hsing-Lien Lin, Chung Chien Wang
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Abstract
A method of manufacturing a semiconductor device includes forming a metal-insulator-metal (MIM) device having a metal organic chemical vapor deposited (MOCVD) lower electrode and an atomic layer deposited (ALD) upper electrode.
Claims12
A method of manufacturing a semiconductor device, comprising:
- providing a substrate;
- forming a trench in the substrate;
- forming a first conductive layer in the trench;
- performing rapid thermal processing of the first conductive layer;
- forming an insulator layer over the first conductive layer;
- and
- forming a second conductive layer on the insulator layer.
4 more elements
A method of manufacturing a semiconductor device, comprising:
- providing a substrate;
- providing a bottom anti-reflective coating (BARC) layer over the substrate;
- forming a photoresist layer over the BARC layer;
- patterning the photoresist layer to form a photoresist mask including an opening for a trench to be formed in the substrate;
- etching the BARC layer and the photoresist layer through the openings in the photoresist mask to expose a portion of the substrate;
- etching the exposed portion of the substrate to form the trench in the substrate;
- forming a first conductive layer in the trench by metal organic chemical vapor deposition (MOCVD);
- performing chemical mechanical polishing;
- performing rapid thermal processing of the first conductive layer;
- forming an insulator layer over the conductive layer;
- and
- forming a second conductive layer on the insulator layer by atomic layer deposition.
9 more elements
Dependencies are inferred from the claim text.