Mos transistor capable of withstanding significant currents

A MOS transistor capable of withstanding significant currents, and formed at the level of a circuit comprising a semiconductor substrate and metal tracks of at least one first and one second metallization levels, the metal tracks of the first metallization level being the closest to the substrate, comprising:

• doped areas corresponding to first and second main terminals of elementary MOS transistors and having, in top view, the shape of parallel strips separated by gate regions;
• first conductive elements which do not extend on the doped areas corresponding to the second main terminals and being divided into first fingers extending at least partly on the doped areas corresponding to the first main terminals and connected thereto;
• and
• second conductive elements which do not extend on the doped areas corresponding to the first main terminals and are divided into second fingers extending at least partly on the doped areas corresponding to the second main terminals and connected thereto, the second fingers being at least partly intercalated with the first fingers, each first or second conductive element comprising at least first parallel metal tracks of the first metallization level, each first metal track corresponding to a first strip extending over all of one of the doped areas, and comprising second metal tracks of the second metallization level, each second metal track corresponding at least partly to a strip extending over less than three quarters of one of the first metal tracks.