Semiconductor integrated circuit device

A semiconductor integrated circuit device, comprising, above a semiconductor substrate:

• a plurality of word lines;
• a plurality of bit lines;
• and
• memory cells each comprising a memory selecting transistor disposed at a predetermined intersection between the plurality of word lines and the plurality of bit lines, and an information storing capacitor connected electrically in series with the memory selecting transistor;
• wherein:
• the information storing capacitor has a second electrode, a capacitor insulation layer deposited on the second electrode, a cap insulation layer deposited on the cap capacitor insulation layer, and a first electrode deposited on the cap insulation layer,
• the first electrode is at least one member selected from ruthenium and ruthenium oxide,
• the capacitor insulation layer is at least one member selected from the group consisting of hafnium dioxide, yttrium-added hafnium dioxide, and zirconium oxide,
• the cap insulation layer is at least one member selected from tantalum oxide and niobium oxide having a higher permittivity than the cap insulation layer,
• the second electrode is at least one element selected from the group consisting of titanium nitride, titanium, tantalum nitride, tantalum, tungsten nitride, tungsten, phosphorus-doped polysilicon, gold, silver, copper, and platinum, and
• the cap insulation layer constitutes a continuous layer and has a thickness of 3 nm or less.