Method for manufacturing semiconductor device

Abstract

A method for manufacturing a semiconductor device comprises the steps of forming protruded electrodes on a plurality chip areas of a semiconductor wafer having the plurality of chip areas and boundary regions formed among the chip areas, both being provided in a surface of the semiconductor wafer, forming a surface-side protective member so as to cover the surface of the semiconductor wafer and the protruded electrodes, removing the semiconductor wafer corresponding to the boundary regions and forming trenches which expose the surface-side protective member, forming a back-side protective member with which the trenches are filled and which covers the back of the semiconductor wafer, and dividing the semiconductor wafer in the boundary regions with widths thinner than those of the trenches in such a manner that the surface-side protective member and the back-side protective member charged into the trenches are left in cut sections.

Dependencies are inferred from the claim text.