Process for manufacturing an array of cells including selection bipolar junction transistors

A process for manufacturing a cell array, comprising:

• forming a plurality of cells each including a selection bipolar transistor and a storage component, each selection bipolar transistor having a first, a second and a control region, and each storage component having a first and a second terminal, said first region of each bipolar transistor being connected to said first terminal of a respective one of the storage components, said plurality of cells being formed by:
• implanting in a semiconductor body a common conduction region of a first conductivity type, the common conduction region including said second regions of said selection bipolar transistors;
• forming a plurality of active area regions of a second conductivity type and a first doping level, overlying said common conduction region and including said control regions of said selection bipolar transistors;
• forming a plurality of second conduction regions of said first conductivity type in said active area regions, the second conduction regions being said first regions of said selection bipolar transistors;
• and
• forming a plurality of control contact regions of said second conductivity type and a second doping level, higher than said first doping level, in said active area regions.

A process of manufacturing a memory device, comprising:

• forming a storage component having first and second terminals;
• and
• forming a selection bipolar transistor having a first conduction region, a second conduction region, and a base region, the first conduction region of the bipolar transistor being connected to the first terminal of the storage component, wherein forming the bipolar transistor includes:
• forming, in a semiconductor body of a first conductivity type, the second conduction region of the bipolar transistor;
• overlying the second conduction region with a first active region of a second conductivity type, the first active region being the base region of the bipolar transistor;
• forming in the first active region a first base contact region of the second conductivity type and a doping level that is higher than a doping level of the first active region;
• forming in the active region the first conduction region of the first conductivity type, the first conduction region being surrounded by the first active region and being spaced laterally apart from the base contact region by a first portion of the active region;
• and
• forming a first conductive contact on the first conduction region and connected between the first conduction region and the storage component.