Method and apparatus for preventing microcircuit dynamic thermo-mechanical damage during an esd event

An integrated circuit incorporating an Electrostatic Discharge (ESD) protection device comprising:

• a semiconductor substrate:
• an electrical contact pad:
• an ESD switch coupled to the Pad and having an active device region formed in the semiconductor substrate:
• and
• a dynamic shock absorbing region formed in the semiconductor substrate adjacent to said active device region said dynamic shock absorbing region made from a material with thermo-mechanical properties substantially more resistant to shock from dynamic effects of ESD than said active device region, wherein said thermo-mechanical properties include a dynamic loss factor higher than approximately 0.01.

An integrated circuit incorporating an Electrostatic Discharge (ESD) protection device comprising:

• a semiconductor substrate;
• an electrical contact pad;
• an ESD switch coupled to the pad and having an active device region formed in the semiconductor substrate:
• and
• a dynamic shock absorbing region formed in the semiconductor substrate adjacent to said active device region, said dynamic shock absorbing region made from a material with thermo-mechanical properties substantially more resistant to shock from dynamic effects of ESD than said active device region, wherein said thermo-mechanical properties further include a melting temperature higher than approximately 800 °K.

An integrated circuit incorporating an Electrostatic Discharge (ESD) protection device comprising:

• a semiconductor substrate;
• an electrical contact pad;
• an ESD switch coupled to the Pad and having an active device region formed in the semiconductor substrate;
• and
• a dynamic shock absorbing region formed in the semiconductor substrate adjacent to said active device region, said dynamic shock absorbing region made from a material with thermo-mechanical properties substantially more resistant to shock from dynamic effects of ESD than said active device region, wherein said thermo-mechanical properties further include a moderately low stiffness as defined by an elastic modulus approximately in the range of 10 GPa and 100 GPa (Giga Pascals).

An integrated circuit incorporating an Electrostatic Discharge (ESD) protection device comprising:

• a semiconductor substrate:
• an electrical contact pad;
• an ESD switch coupled to the Pad and having an active device region formed in the semiconductor substrate;
• and
• a dynamic shock absorbing region formed in the semiconductor substrate adjacent to said active device region, said dynamic shock absorbing region made from a material with thermo-mechanical properties substantially more resistant to shock from dynamic effects of ESD than said active device region, wherein said thermo-mechanical properties further include a tensile strength higher than approximately 100 MPa.

An integrated circuit incorporating an Electrostatic Discharge (ESD) protection device comprising:

• a semiconductor substrate:
• an ESD switch having an active device region formed in the semiconductor substrate;
• and
• a plurality of dynamic shock absorbing regions formed around the active device region, said dynamic shock absorbing region made from a material with thermo-mechanical properties substantially more resistant to shock from dynamic effects of ESD than said active device region, wherein said thermo-mechanical properties include a dynamic loss factor higher than approximately 0.01.

An integrated circuit incorporating an Electrostatic Discharge (ESD) protection device comprising:

• a semiconductor substrate;
• an ESD switch having an active device region formed in the semiconductor substrate:
• and
• a plurality of dynamic shock absorbing regions formed around the active device region, said dynamic shock absorbing region made from a material with thermo-mechanical Properties substantially more resistant to shock from dynamic effects of ESD than said active device region, wherein said thermo-mechanical properties further include a melting temperature higher than approximately 800 °K.

An integrated circuit incorporating an Electrostatic Discharge (ESD) protection device comprising:

• a semiconductor substrate;
• an ESD switch having an active device region formed in the semiconductor substrate:
• and
• a plurality of dynamic shock absorbing regions formed around the active device region, said dynamic shock absorbing region made from a material with thermo-mechanical properties substantially more resistant to shock from dynamic effects of ESD than said active device region, wherein said thermo-mechanical properties further include a moderately low stiffness as defined by an elastic modulus approximately in the range of 10 GPa and 100 GPa (Giga Pascals).

An integrated circuit incorporating an Electrostatic Discharge (ESD) protection device comprising:

• a semiconductor substrate:
• an ESD switch having an active device region formed in the semiconductor substrate;
• and
• a plurality of dynamic shock absorbing regions formed around the active device region, said dynamic shock absorbing region made from a material with thermo-mechanical properties substantially more resistant to shock from dynamic effects of ESD than said active device region, wherein said thermo-mechanical properties further include a moderately high tensile strength higher than approximately 100 MPa.

An integrated circuit incorporating an Electrostatic Discharge (ESD) protection device comprising:

• a semiconductor substrate;
• an ESD circuit comprising a switch having an active device region formed in the semiconductor substrate and one or more passive circuit components;
• and
• means for absorbing dynamic shock from at least one of the switch and one or more passive components in response to an ESD event, wherein said means for absorbing shock comprises a region above the active device region made from a material with thermo-mechanical properties resistant to shock from dynamic effects of ESD, the thermo-mechanical properties including a high material dynamic loss factor higher than approximately 0.01.