The ultimate SIMOX

Abstract

A method of forming a silicon-on-insulator (SOI) substrate having a buried oxide region that has a greater content of thermally grown oxide as compared to oxide formed by implanted oxygen ions is provided. Specifically, the inventive SOI substrate is formed by utilizing a method wherein oxygen ions are implanted into a surface of a Si-containing substrate that includes a sufficient Si thickness to allow for subsequent formation of a buried oxide region in the Si-containing substrate which has a greater content of thermally grown oxide as compared to oxide formed by the implanted oxygen ions followed by an annealing step. The sufficient Si thickness can be obtained by (i) forming a Si layer on the surface of the implanted substrate prior to annealing; (ii) conducting a high-energy, high-dose oxygen implant to ensure that the oxygen ions are implanted a sufficient distance from the surface of the Si-containing substrate; or (iii) conducting a high-energy, low-dose oxygen implant so that less implanted oxide is present in the Si-containing substrate.

Dependencies are inferred from the claim text.