Copper-based metal polishing composition, method for manufacturing a semiconductor device, polishing composition, aluminum-based metal polishing composition, and tungsten-based metal polishing composition

A method for manufacturing a semiconductor device, comprising the steps of:

• forming at least one member for embedment selected from an opening corresponding to a shape of a via fill and a trench corresponding to a shape of a wiring layer in an insulating film on a semiconductor substrate;
• forming a conductive material film comprising copper or copper alloy on said insulating film including said member;
• and
• polishing said conductive material film by using a polishing composition comprising a water-soluble first organic acid capable of reaction with copper to produce a copper complex compound which is substantially insoluble in water and has a mechanical strength lower than that of copper, at least one second organic acid selected from an organic acid having a single carboxyl group and a single hydroxyl group, and oxalic acid, an abrasive grain, an oxidizing agent and water, thereby forming at least one conductive member selected from a wiring layer and a via fill in said member for embedment.

A method for manufacturing a semiconductor device, comprising the steps of:

• forming at least one member for embedment selected from an opening corresponding to a shape of a via fill and a trench corresponding to a shape of a wiring layer in an insulating film on a semiconductor substrate;
• forming a conductive material film comprising copper or copper alloy on said insulating film including said member;
• and
• polishing said conductive material film by using a polishing composition comprising a water-soluble organic acid capable of reaction with copper to produce a copper complex compound which is substantially insoluble in water and has a mechanical strength lower than that of copper, an oxidizing agent, colloidal alumina and water, thereby forming at least one conductive member selected from a wiring layer and a via fill in said member for embedment.

A method for manufacturing a semiconductor device, comprising the steps of:

• forming a trench corresponding to a shape of a wiring layer in an insulating film on a semiconductor substrate, and forming an opening reached to a surface of said semiconductor substrate in said insulating film portion which is positioned at a part of the bottom of said trench;
• forming a conductive material film comprising copper or copper alloy on said insulating film including said trench and said opening;
• and
• polishing said conductive material film by using a polishing composition comprising a water-soluble first organic acid capable of reaction with copper to produce a copper complex compound which is substantially insoluble in water and has a mechanical strength lower than that of copper, at least one second organic acid selected from an organic acid having a single carboxyl group and a single hydroxyl group and oxalic acid, an abrasive grain, an oxidizing agent, and water, thereby forming wiring having a dual damascene structure in the opening and trench.

A method for manufacturing a semiconductor device, comprising the steps of:

• forming at least a first opening corresponding to a shape of a first via fill in a first insulating film on a semiconductor substrate,
• forming a first conductive material film comprising copper or copper alloy on said first insulating film including said opening;
• polishing said first conductive material film by using a polishing composition comprising a water-soluble first organic acid capable of reaction with copper to produce a copper complex compound which is substantially insoluble in water and has a mechanical strength lower than that of copper, at least one second organic acid selected from an organic acid having a single carboxyl group and a single hydroxyl group and oxalic acid, an abrasive grain, an oxidizing agent, and water, thereby forming said first via fill in said first opening;
• forming a second insulating film on said first insulating film including said first via fill;
• forming a second opening corresponding to a shape of a second via fill reached to at least said first via fill in said second insulating film;
• forming a second conductive material film comprising copper or copper alloy on said second insulating film including said second opening;
• and
• polishing said second conductive material film by using a second polishing composition comprising a water-soluble first organic acid capable of reaction with copper to produce a copper complex compound which is substantially insoluble in water and has a mechanical strength lower than that of copper, at least one second organic acid selected from an organic acid having a single carboxyl group and a single hydroxyl group and oxalic acid, an abrasive grain, an oxidizing agent, and water, thereby forming said second via fill in said second opening.