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US 2002/0160208 A1Published application
SOI substrate, annealing method therefor, semiconductor device having the SOI substrate, and method of manufacturing the same
OwnerMasataka Itoinventor
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Abstract
This invention relates to a method of manufacturing an SOI wafer having a low HF defect density using annealing in a reducing atmosphere. An SOI substrate is annealed in a reducing atmosphere at a temperature lower than the melting point of single-crystal silicon. To prevent any HF defects, a holding tool having a surface formed from silicon is used as a holding tool for holding the SOI substrate.
Claims18
An annealing method of annealing an SOI substrate in a reducing atmosphere, comprising the step of:
- holding the SOI substrate by a holding portion having a surface formed from silicon and annealing the SOI substrate.
An annealing method of annealing an SOI substrate in a reducing atmosphere, comprising the step of:
- holding the SOI substrate by a holding portion which contains no silicon carbide formed by sintering and has a surface formed from silicon carbide deposited by CVD and annealing the SOI substrate.
Dependencies are inferred from the claim text.