SOI annealing method and SOI manufacturing method
AssigneeCanon Kabushiki Kaisha
InventorMasataka Ito
Life of this patent
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Abstract
The HF defect density in an SOI is reduced. An SOI having a thickness of 200 nm or less is annealed in an inert atmosphere at a temperature between the eutectic temperature (e.g., 966° C.) of a semiconductor metal compound (e.g., nickel silicide) formed from a metal and the semiconductor material of the crystal semiconductor of the SOI (inclusive) and the melting point of the semiconductor material (inclusive).
Claims34
An SOI annealing method comprising:
- the first annealing step of annealing an SOI having a semiconductor layer with a thickness of not more than 200 nm on an insulator in a first reducing atmosphere at a temperature not more than a melting point of silicon;
- and
- the second annealing step of, after the first annealing step, annealing the SOI in an inert atmosphere or a second reducing atmosphere weaker than the first reducing atmosphere at a temperature between 966° C. (inclusive) and the melting point of silicon (inclusive).
An SOI annealing method wherein an SOI having a semiconductor layer with a thickness of not more than 200 nm on an insulating surface is annealed in an inert atmosphere at a temperature between 966° C. (inclusive) and the melting point of silicon (inclusive).
An SOI annealing method comprising:
- the first annealing step of annealing an SOI having a semiconductor layer with a thickness of not more than 200 nm on an insulator in a first reducing atmosphere at a temperature not more than a melting point of silicon;
- and
- the second annealing step of, after the first annealing step, annealing the SOI in an inert atmosphere or a second reducing atmosphere weaker than the first reducing atmosphere at a temperature between a eutectic temperature of a semiconductor metal compound formed from a metal and a semiconductor material of the semiconductor layer (inclusive) and the melting point of the semiconductor material (inclusive).
An SOI annealing method wherein an SOI having a semiconductor layer with a thickness of not more than 200 nm on an insulator is annealed in an inert atmosphere at a temperature between a eutectic temperature of a semiconductor metal compound formed from a metal and a semiconductor material of the semiconductor layer (inclusive) and a melting point of the semiconductor material (inclusive).
Dependencies are inferred from the claim text.