Method of fabricating a dummy gate electrode of an ESD protecting device

A method of fabricating a semiconductor device, comprising the steps of:

• (a) providing a semiconductor substrate of a first conductivity type having an internal circuit device region and an ESD protecting device region;
• (b) forming a sacrificial layer having a first trench for exposing a first predetermined area of the substrate on the ESD protecting device region, a second trench for exposing a second predetermined area of the substrate on the internal circuit device region, and a third trench for exposing a third predetermined area of the substrate on the ESD protecting device region;
• (c) forming a photoresist layer on the sacrificial layer to expose the first predetermined area of the substrate in the first trench is exposed;
• (d) forming a first impurity layer of a second conductivity type in the first predetermined area of exposed substrate on the ESD protecting region;
• (e) removing the photoresist layer, forming a gate insulating layer on the exposed substrate, and then filling the first trench, the second trench and the third trench with a conductive layer which serves as a dummy gate electrode of the ESD protecting device, a gate electrode of the internal circuit device and a gate electrode of the ESD protecting device respectively;
• (f) removing the sacrificial layer and forming a second impurity layer of the second conductivity type in the expoded substrate at both sides of the gate electrodes and the dummy electrode respectively;
• and
• (g) forming a silicide layer on the gate electrodes, the dummy gate electrode and the second impurity layer.