US 2002/0001957 A1 · Method for forming fine patterns by thinning developed photoresist patterns using oxygen radicals

Abstract

The present invention relates to a method for fabricating a semiconductor device; and, more particularly, to a photoresist pattern to form a fine line width of about 0.1 μm or less. A method for forming fine photoresist patterns according to the present invention comprises the step of: forming photoresist patterns over a semiconductor substrate using a stepper; and ashing the photoresist patterns using oxygen radicals in order to decrease line width of the photoresist patterns. The oxygen radicals are formed by a thermal decomposition of an ozone gas in an ozone asher. Accordingly, the present invention overcomes the resolution of the stepper by controlling the ashing rate at a low temperature using the oxygen radicals in the ozone asher.

Claims18

Dependent claims

A method for forming fine photoresist patterns in a semiconductor device comprising the steps of:

forming photoresist patterns over a semiconductor substrate using a stepper;
and
ashing the photoresist patterns using oxygen radicals in order to decrease line width of the photoresist patterns.

Dependencies are inferred from the claim text.

Facts

Application

09/894,155Filed 27 Jun 2001

Priority

KR 2000-3596928 Jun 2000

Published

3 Jan 2002

Term ends

Not estimatedThe source records don’t support an estimate.

Classification4 codes

H10P 50/287
Of organic materials: by chemical means
G03F 7/40
Processing photosensitive materials; Apparatus therefor: treatment after imagewise removal, e.g. baking
H10P
Generic processes or apparatus for the manufacture or treatment of devices covered
G03F
Photomechanical production of textured or patterned surfaces

Method for forming fine patterns by thinning developed photoresist patterns using oxygen radicals

Life of this patent

Method for forming fine patterns by thinning developed photoresist patterns using oxygen radicals

Life of this patent

Abstract

Claims18