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US 2002/0000423 A1Published application
Method for enhancing oxide to nitride selectivity through the use of independent heat control
AssigneeMicron Technologies, Inc.
InventorsDavid S. Becker, Guy T. Blalock, Fred L. Roe
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Abstract
A process for controlling the etch of a silicon dioxide layer at a high etch rate and high selectivity with respect to silicon nitride, particularly in a multilayer structure, by maintaining various portions of the etch chamber at elevated temperatures.
Claims29
A method of etching a substrate, comprising steps of:
- providing a substrate having oxide over silicon nitride;
- providing a fluorinated plasma comprising an additive fluorocarbon having at least as many hydrogen atoms as fluorine;
- and
- exposing said substrate to said fluorinated plasma to etch through at least a portion of said oxide to expose a region of said silicon nitride.
1 more element
A method of etching a layered semiconductor substrate, comprising steps of:
- providing nitride over at least a portion of a semiconductor substrate;
- forming second different material over at least a portion of said nitride;
- and
- etching through at least a portion of said second material to expose at least a portion of said nitride;
- said etching using a plasma comprising an additive fluorocarbon compound having at least as many hydrogen atoms as fluorine.
2 more elements
A method of plasma processing a layered structure, said method comprising the steps of:
- providing a layered structure comprising silicon nitride and silicon oxide over at least a portion thereof;
- generating a plasma from gases comprising first fluorocarbons having at least as many hydrogen atoms as fluorine;
- and
- employing said plasma to etch through at least a portion of said silicon oxide and expose a portion of said silicon nitride.
1 more element
Dependencies are inferred from the claim text.