Manufacture of a semiconductor device
AssigneeNEC Corporation
InventorAtsushi Kariya
Life of this patent
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Abstract
The present method of manufacturing a semiconductor device has a step of forming a metal film on the surface of a group of semiconductor wafers by bringing the internal temperature of a chamber of a film formation device to a film formation temperature at which the metal film is deposited, followed by a step of lowering the temperature of the chamber to a standby temperature at a constant rate and holding the temperature of the chamber at the standby temperature until the film formation for the next group of the semiconductor wafers.
Claims7
A method of manufacturing a semiconductor device comprising:
- a step of forming a metal film on the surface of a group of semiconductor wafers by bringing the internal temperature of a chamber of a film formation device to a film formation temperature for depositing said metal film, and
- a step of then lowering the temperature of said chamber to a standby temperature at a constant rate and holding said chamber at said standby temperature until the film formation for the next group of semiconductor wafers.
A method of manufacturing a semiconductor device comprising:
- a step of forming a metal film on the surface of a group of semiconductor wafers by bringing the internal temperature of a chamber of a film formation device to a film formation temperature for depositing said metal film, and
- a step of then lowering the temperature of said chamber stepwise to a standby temperature to let said chamber stand by until the film formation for the next group of semiconductor wafers.
Dependencies are inferred from the claim text.