US 2001/0018270 A1 · Slurry for chemical mechanical polishing

Abstract

The present invention relates to a slurry used for chemical mechanical polishing of a substrate having an insulating film and a tantalum-containing metal film formed on the insulting film, which slurry contains a silica abrasive and a polycarboxylic acid such as oxalic acid, malonic acid, tartaric acid, malic acid, glutaric acid, citric acid, maleic acid or the like. According to the present invention, a buried electric connection of high reliability and excellent electrical properties can be formed at a high polishing rate, i.e. at a high throughput with the generation of dishing and erosion being suppressed.

Claims10

Dependent claims

A slurry used for chemical mechanical polishing of a substrate having an insulating film and a tantalum-containing metal film formed on the insulting film, which slurry contains a silica abrasive and a carboxylic acid represented by the following chemical formula (1):

3
where n is 0, 1, 2 or 3, and each R1 and R2 is, independently for a carbon atom to which it attaches, hydrogen, —OH or —COOH;
or chemical formula (2):
4
where each of R3 and R4 is independently a hydrogen or —OH.

2 more elements

Dependencies are inferred from the claim text.

Slurry for chemical mechanical polishing

Life of this patent

Slurry for chemical mechanical polishing

Life of this patent

Abstract

Claims10