Method of manufacturing semiconductor device having capacitor

A method of manufacturing a semiconductor device comprising the steps of:

• forming an impurity diffusion layer in a semiconductor substrate;
• forming a first insulating film covering the semiconductor substrate;
• forming a lower electrode of a capacitor on the first insulating film;
• forming an oxide dielectric film of the capacitor on the lower electrode;
• forming an upper electrode of the capacitor on the oxide dielectric film;
• forming a second insulating film for covering the capacitor;
• forming a first opening on or above the impurity diffusion layer and a second opening on the upper electrode in the first and second insulating films, by etching a part of the second insulating film and a part of the first insulating film;
• forming an oxidation-preventing metal film on the second insulating film for connecting electrically the diffusion layer via the first opening and the upper electrode via the second opening;
• forming a local interconnection in a range which pass through the first opening and the second opening and contains at least a region where the upper electrode contacts the oxide dielectric film, by patterning the oxidation-preventing metal film;
• and
• forming a third insulating film for covering the local interconnection.