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US 12,772,525 B2Granted
Composite structure, method for manufacturing the same and non- volatile optical memory device
AssigneeNational Cheng Kung University
InventorsChia-Yun Chen, Zhe-Hao Liu, Kuan-Han Lin, Jheng-Yi Li
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Abstract
A composite structure includes a dielectric layer, a two-dimensional graphene layer and a carbon quantum dot film. The dielectric layer is disposed on a first surface of a silicon substrate. The two-dimensional graphene layer is disposed on the dielectric layer. The carbon quantum dot film is disposed on the two-dimensional graphene layer.
Claims8
A composite structure, comprising:
- a dielectric layer disposed on a first surface of a silicon substrate;
- a two-dimensional graphene layer disposed on the dielectric layer;
- a carbon quantum dot film disposed on the two-dimensional graphene layer;
- a first electrode disposed on a second surface of the silicon substrate opposite to the first surface;
- and
- two second electrodes disposed spaced apart from each other on the carbon quantum dot film.
3 more elements
Dependencies are inferred from the claim text.