Selective area metal process for improved metallurgical bonding of aluminum to copper for integrated passive devices in a semiconductor device

A method for fabricating an integrated passive device with improved metallurgical bonding between dissimilar metal layers, the method comprising:

• etching a pattern of recesses into a device laminate structure defined by a device core of a first metal material, first and second conducting polymer layers fixed to opposing sides of the device core, and first and second metal layers fixed to respective first and second conducting polymer layers with a carbon coating in between, at least one of the recesses extending from the first and second metal layers to the device core;
• depositing electrode contacts onto the first and second metal layers;
• depositing an insulating dielectric around the device laminate structure with the recesses therein being filled with the insulating dielectric, an encapsulate structure with top and bottom faces being defined by the insulating dielectric;
• drilling one or more vias in areas corresponding to the recesses;
• applying a vapor phase metal bonding material to exposed surfaces of the encapsulate structure and the device core, with a contiguous bonding material layer being formed thereon;
• filling the one or more vias with a second metal material different from the second metal material;
• and
• laminating a first terminal metal layer and a second terminal metal layer onto the encapsulate structure, the first terminal metal layer and the second terminal metal layer being connected to the one or more vias.