Method for transfer of a thin layer of silicon

A method of transferring a silicon layer from a single crystal silicon donor substrate to a handle substrate, the method comprising:

• (a) implanting H+ ions through a silicon dioxide layer in contact with a front surface of the single crystal silicon donor substrate and through the front surface of the single crystal silicon donor substrate, the single crystal silicon donor substrate comprising two major, parallel surfaces one of which is the front surface and one of which is a back surface, a circumferential edge joining the front surface and the back surface, a central plane between the front surface and the back surface, a central axis perpendicular to the front surface, and a bulk region between the front surface and the back surface, wherein the H+ ions are implanted at a dosage between about 5×1015 ions/cm2 and about 2×1016 ions/cm2 at an implant energy between about 5 Kev and about 20 Kev;
• (b) implanting He+ ions through the silicon dioxide layer in contact with the front surface of the single crystal silicon donor substrate and through the front surface of the single crystal silicon donor substrate, wherein the He+ ions are implanted at a dosage between about 6×1015 ions/cm2 and about 8×1015 ions/cm2 at an implant energy between about 5 Kev and about 30 Kev;
• (c) annealing the ion implanted single crystal silicon donor substrate at a temperature and for a duration sufficient to form a damage layer in the single crystal silicon donor substrate;
• (d) bonding the silicon dioxide layer in contact with the front surface of the single crystal silicon donor substrate to a dielectric layer in contact with the handle substrate to thereby prepare a multilayer substrate;
• (e) annealing the multilayer substrate;
• and
• (f) cleaving the annealed multilayer substrate at the damage layer in the single crystal silicon donor substrate to thereby transfer the silicon layer having a thickness between about 500 Angstroms and about 2500 Angstroms from the single crystal silicon donor substrate to the handle substrate.

A method of transferring a silicon layer from a single crystal silicon donor substrate to a handle substrate, the method comprising:

• (a) implanting H2+ ions, H+ ions, or a combination of H2+ ions and H+ ions through a silicon dioxide layer in contact with a front surface of the single crystal silicon donor substrate and through the front surface of the single crystal silicon donor substrate, the single crystal silicon donor substrate comprising two major, parallel surfaces one of which is the front surface and one of which is a back surface, a circumferential edge joining the front surface and the back surface, a central plane between the front surface and the back surface, a central axis perpendicular to the front surface, and a bulk region between the front surface and the back surface, wherein the H2+ ions are implanted at a dosage between about 4.3×1015 ions/cm2 and about 1.1×1016 ions/cm2 at an implant energy between about 10 Kev and about 30 Kev and the H+ ions are implanted at a dosage between about 5×1015 ions/cm2 and about 2×1016 ions/cm2 at an implant energy between about 5 Kev and about 20 Kev;
• (b) implanting He+ ions through the silicon dioxide layer in contact with the front surface of the single crystal silicon donor substrate and through the front surface of the single crystal silicon donor substrate, wherein the He+ ions are implanted at a dosage between about 6×1015 ions/cm2 and about 8×1015 ions/cm2 at an implant energy between about 5 Kev and about 30 Kev;
• (c) bonding the silicon dioxide layer in contact with the front surface of the single crystal silicon donor substrate to the handle substrate to thereby prepare a multilayer substrate;
• (d) annealing the ion implanted single crystal silicon donor substrate at a temperature and for a duration sufficient to form a damage layer in the single crystal silicon donor substrate;
• and
• (e) cleaving the multilayer substrate at the damage layer in the single crystal silicon donor substrate to thereby transfer the silicon layer having a thickness between about 500 Angstroms and about 2500 Angstroms from the single crystal silicon donor substrate to the handle substrate.