Chemical mechanical polishing composition

A process for chemical mechanical polishing of a substrate comprising (i) cobalt and/or (ii) a cobalt alloy, and (iii) TiN and TaN, the process comprising contacting the substrate with a chemical mechanical polishing composition, comprising:

• (A) ≥0.10 wt.-% to ≤4.00 wt.-% of inorganic particles,
• (B) ≥0.10 wt.-% to ≤0.90 wt.-% of at least one organic compound comprising an amino group and/or at least one acid group (Y), (C) ≥0.20 wt.-% to ≤0.90 wt.-% of potassium persulfate, (D) ≥95.00 wt.-% to ≤99.58 wt.-% of an aqueous medium, (E) ≥0.01 wt.-% to ≤0.50 wt.-% of at least one corrosion inhibitor, and (K) ≥0.01 wt.-% to ≤1.50 wt.-% of at least one additive,
• wherein wt.-% is based on a total weight of the chemical mechanical polishing composition, and wherein the chemical mechanical polishing composition has a pH of ≥8.5 to ≤10.0;
• wherein the composition contains no oxidant other than (c):
• and
• wherein a TiN:TaN ratio of material removal rate (MRR) is in a range of ≥0.5 to ≤2.0.

A process for the manufacture of a semiconductor device, the process comprising chemical mechanical polishing of a substrate comprising

• (i) cobalt, and/or
• (ii) a cobalt alloy, and
• (iii) TiN and TaN in the presence of a chemical mechanical polishing composition, comprising:
• (A) ≥0.10 wt.-% to ≤4.00 wt.-% of inorganic particles,
• (B) ≥0.10 wt.-% to ≤0.90 wt.-% of at least one organic compound comprising an amino group and/or at least one acid group (Y),
• (C) ≥0.20 wt.-% to ≤0.90 wt.-% of potassium persulfate,
• (D) ≥95.00 wt.-% to ≤99.58 wt.-% of an aqueous medium,
• (E) ≥0.01 wt.-% to ≤0.50 wt.-% of at least one corrosion inhibitor, and
• (K) ≥0.01 wt.-% to ≤1.50 wt.-% of at least one additive,
• wherein the chemical mechanical polishing composition has a pH of ≥8.5 to ≤11.0, and
• wt.-% is based on a total weight of the chemical mechanical polishing composition;
• wherein the composition contains no oxidant other than (c).;
• and
• wherein a TiN:TaN ratio of material removal rate (MRR) is in a range of ≥0.5 to ≤2.0.