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US 11,443,978 B2Granted
Method for transfer of a thin layer of silicon
AssigneeGlobalWafers Co., Ltd.
InventorsGaurab Samanta, Salvador Zepeda
Life of this patent
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Abstract
A method for preparing semiconductor on insulator structures comprises transferring a thin layer of silicon from a donor substrate onto a handle substrate.
Claims36
A method of transferring a silicon layer from a single crystal silicon donor substrate to a handle substrate, the method comprising:
- (a) implanting H2+ ions, H+ ions, or a combination of H2+ ions and H+ ions through a silicon dioxide layer in contact with a front surface of the single crystal silicon donor substrate and through the front surface of the single crystal silicon donor substrate, the single crystal silicon donor substrate comprising two major, parallel surfaces one of which is the front surface and one of which is the back surface, a circumferential edge joining the front surface and the back surface, a central plane between the front surface and the back surface, a central axis perpendicular to the front surface, and a bulk region between the front surface and the back surface, wherein the H2+ ions are implanted at an implant energy between about 10 Kev and about 30 Kev and the H+ ions are implanted at an implant energy between about 5 Kev and about 20 Kev, wherein a peak density, (D1), of H2+ ions, H+ ions, or a combination of H2+ ions and H+ ions is between about 100 Angstroms and about 3000 Angstroms as measured from the front surface of the single crystal silicon donor substrate and along the central axis;
- (b) implanting He+ ions through the silicon dioxide layer in contact with the front surface of a single crystal silicon donor substrate and through the front surface of the single crystal silicon donor substrate, wherein the He+ ions are implanted at an implant energy between about 5 Kev and about 30 Kev, wherein a peak density, (D2), of He+ ions is between about 100 Angstroms and about 3000 Angstroms as measured from the front surface of the single crystal silicon donor substrate and along the central axis and further wherein the peak density, (D1), of H2+ ions, H+ ions, or a combination of H2+ ions and H+ ions and the peak density, (D2), of He+ ions are within about 450 Angstroms of each other;
- (c) annealing the ion implanted single crystal silicon donor substrate at a temperature between about 200° C. and about 350° C. and for a duration sufficient to form a damage layer in the single crystal silicon donor substrate;
- (d) bonding the silicon dioxide layer in contact with the front surface of the single crystal silicon donor substrate to a dielectric layer in contact with the handle substrate to thereby prepare the multilayer substrate;
- (e) annealing the multilayer substrate at a temperature between about 200° C. and about 400° C. and for a duration sufficient to thermally activate the damage layer;
- and
- (f) cleaving the annealed multilayer substrate at the damage layer in the single crystal silicon donor substrate to thereby transfer the silicon layer having a thickness between about 500 Angstroms and about 2500 Angstroms from the single crystal silicon donor substrate to the handle substrate.
4 more elements
A method of transferring a silicon layer from a single crystal silicon donor substrate to a handle substrate, the method comprising:
- (a) implanting H+ ions through a silicon dioxide layer in contact with a front surface of the single crystal silicon donor substrate and through the front surface of the single crystal silicon donor substrate, the single crystal silicon donor substrate comprising two major, parallel surfaces one of which is the front surface and one of which is the back surface, a circumferential edge joining the front surface and the back surface, a central plane between the front surface and the back surface, a central axis perpendicular to the front surface, and a bulk region between the front surface and the back surface, wherein the H+ ions are implanted at an implant energy between about 5 Kev and about 20 Kev, wherein a peak density, (D1), of H+ ions is between about 100 Angstroms and about 3000 Angstroms as measured from the front surface of the single crystal silicon donor substrate and along the central axis;
- (b) implanting He+ ions through the silicon dioxide layer in contact with the front surface of a single crystal silicon donor substrate and through the front surface of the single crystal silicon donor substrate, wherein the He+ ions are implanted at an implant energy between about 5 Kev and about 30 Kev, wherein a peak density, (D2), of He+ ions is between about 100 Angstroms and about 3000 Angstroms as measured from the front surface of the single crystal silicon donor substrate and along the central axis and further wherein the peak density, (D1), of H+ ions and the peak density, (D2), of He+ ions are within about 450 Angstroms of each other;
- (c) annealing the ion implanted single crystal silicon donor substrate at a temperature between about 200° C. and about 350° C. and for a duration sufficient to form a damage layer in the single crystal silicon donor substrate;
- (d) bonding the silicon dioxide layer in contact with the front surface of the single crystal silicon donor substrate to a dielectric layer in contact with the handle substrate to thereby prepare the multilayer substrate;
- (e) annealing the multilayer substrate at a temperature between about 200° C. and about 400° C. and for a duration sufficient to thermally activate the damage layer;
- and
- cleaving the annealed multilayer substrate at the damage layer in the single crystal silicon donor substrate to thereby transfer the silicon layer having a thickness between about 500 Angstroms and about 2500 Angstroms from the single crystal silicon donor substrate to the handle substrate.
4 more elements
Dependencies are inferred from the claim text.