Semiconductor device and manufacturing method of the semiconductor device

A semiconductor device comprising:

• a stack structure including insulating layers and conductive layers, which are alternately stacked;
• a channel structure penetrating the stack structure;
• insulating patterns respectively interposed between the insulating layers and the channel structure, the insulating patterns protruding farther toward the channel structure than the conductive layers, wherein the insulating patterns are spaced apart from each other in a direction in which the insulating layers and the conductive layers are stacked;
• data storage patterns respectively interposed between the conductive layers and the channel structure, the data storage patterns protruding farther toward the channel structure than the insulating patterns;
• and
• blocking patterns respectively interposed between the conductive layers and the data storage patterns.

A semiconductor device comprising:

• a stack structure including insulating layers and conductive layers, which are alternately stacked;
• a channel structure penetrating the stack structure;
• data storage patterns respectively interposed between the conductive layers and the channel structure, wherein each of the data storage patterns include a curved surface;
• blocking patterns respectively interposed between the conductive layers and the data storage patterns;
• insulating patterns respectively interposed between the insulating layers and the channel structure;
• and
• insulative liners interposed between the insulating layers and the insulating patterns, the insulative liners respectively surrounding the insulating patterns.