Metal resistor structures with nitrogen content
AssigneeInternational Business Machines Corporation
InventorChih-Chao Yang
Life of this patent
Estimating the term…
Abstract
Resistor elements and methods of forming the resistor elements generally include increasing resistivity by diffusing nitrogen ions from an underlying dielectric layer into a metal resistor layer defining the resistor elements. One or more embodiments include a first resistor element and at least one additional resistor element disposed on a first dielectric material and at least one additional dielectric material, respectively, of a dielectric layer. The first dielectric material is different from the at least one additional dielectric material, and the first resistor element has a different resistivity than the at least one additional resistor element.
Claims6
A semiconductor structure, comprising:
- a first resistor element and at least one additional resistor element disposed on a dielectric layer formed of a first dielectric material including regions of at least one additional dielectric material within the dielectric layer, wherein the first resistor element is on the first dielectric material and the at least one additional resistor element is on the regions of the at least one additional dielectric material, wherein the first dielectric material is different from the at least one additional dielectric material, wherein the first dielectric material has a percentage of nitrogen ions at a penetration depth between 2 percent and 10 percent and the at least one additional dielectric material has a percentage of nitrogen ions at the penetration depth between 0.5 percent and 1.5 percent, wherein the penetration depth is less than about 10 Angstroms, and wherein the first resistor element has a different resistivity than the at least one additional resistor element.
Dependencies are inferred from the claim text.