Loading patent…
AssigneeRohm and Haas Electronic Materials CMP Holdings, Inc.
InventorsYi Guo, David Mosley, Naresh Kumar Penta
Estimating the term…
The present invention provides aqueous chemical mechanical planarization (CMP) polishing compositions that comprise a mixture of one or more surfactants chosen from an amine alkoxylate, an ammonium alkoxylate, or mixtures thereof, and colloidal silica particles having at least one cationic species, the colloidal silica particles being present in the amount of from 1 to 30 wt. %, as solids based on the total weight of the composition, and the compositions having a pH ranging from 2 to 6. The surfactants have a hydrophobic tail. The CMP polishing compositions exhibit tunable oxide:polysilicon and oxide:nitride removal rate ratios and reduce both silicon nitride and polysilicon removal rates significantly without significantly reducing dielectric (e.g. TEOS) removal rates.
An aqueous chemical mechanical planarization (CMP) polishing composition comprising a mixture of one or more surfactants having a hydrophobic alkyl or aryl-substituted alkyl (aralkyl) group chosen from an amine alkoxylate, an ammonium alkoxylate, or mixtures thereof, and one or more dispersions of colloidal silica particles having at least one cationic nitrogen atom containing group on or within the colloidal silica particles, the one or more dispersions of colloidal silica particles being present in the amount of from 1 to 30 wt. %, as solids based on the total weight of the composition, the compositions having a pH ranging from 2 to 6, and wherein at least one of the one or more dispersions of colloidal silica particles has a zeta potential of from +5 to +50 mV.
Dependencies are inferred from the claim text.