H01S 5/0618
Details on the linewidth enhancement parameter alpha
Official title: {Details on the linewidth enhancement parameter alpha}
H01S5/0618 (Details on the linewidth enhancement parameter alpha) appears on 11 US grants and 8 published applications in this corpus.
Search patents in H01S- Granted patents
- 11
- Published applications
- 8
- Assignees
- 15
- Inventors
- 35
- Latest grant
- 1 Dec 2009
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1990 | 3 | 0 |
| 1991 | 1 | 0 |
| 1992 | 0 | 0 |
| 1993 | 2 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 1 |
| 2005 | 1 | 2 |
| 2006 | 0 | 0 |
| 2007 | 1 | 1 |
| 2008 | 1 | 1 |
| 2009 | 1 | 0 |
| 2010 | 0 | 0 |
| 2011 | 0 | 0 |
| 2012 | 0 | 1 |
| 2013 | 0 | 0 |
| 2014 | 0 | 0 |
| 2015 | 0 | 1 |
| 2016 | 0 | 0 |
| 2017 | 0 | 0 |
| 2018 | 0 | 0 |
| 2019 | 0 | 0 |
| 2020 | 0 | 0 |
| 2021 | 0 | 0 |
| 2022 | 0 | 0 |
| 2023 | 0 | 0 |
| 2024 | 0 | 1 |
By publication year. Applications have been published since 2001.
Recent patents
- Vertical cavity surface emitting laser with optimized linewidth enhancement factor1 Dec 2009US 7,627,015 B2Finisar Corporation
- Vertical cavity surface emitting laser optimized for thermal sensitivity15 Apr 2008US 7,359,419 B2Finisar Corporation
- Semiconductor laser devices and methods23 Oct 2007US 7,286,583 B2The Board of Trustees of the University of Illinois
- Electroabsorption modulator18 Oct 2005US 6,956,232 B2TriQuint Technology Holding Co.
- Semiconductor optical amplifying media with reduced self-focusing12 Aug 1997US 5,657,157 ASDL, Inc.
- All-integrated complex signal generation and processing21 Mar 2024US 2024/0097405 A1California Institute of Technology
- Tunable external cavity laser8 Oct 2015US 2015/0288143 A1Electronics and Telecommunications Research Institute
- Tunable laser system and method22 Nov 2012US 2012/0294320 A1University College Cork, National University of Ireland
- Semiconductor laser devices and methods17 Apr 2008US 2008/0089368 A1The Board of Trustees of the University of Illinois
- Semiconductor laser devices and methods27 Sep 2007US 2007/0223547 A1The Board of Trustees of the University of Illinoi
Most cited
By later US patents
- Semiconductor element having opposite signs of .alpha. parameter36US 5,208,822 AKokusai Denshin Denwa Kabushiki Kaisha · 1993
- Semiconductor laser structures35US 4,964,134 ABritish Telecommunications Public Ltd.Co. · 1990
- Semiconductor laser devices and methods32US 7,286,583 B2The Board of Trustees of the University of Illinois · 2007
- Optical semiconductor device30US 5,253,264 AKabushiki Kaisha Toshiba · 1993
- Distributed feedback laser for frequency modulated communication systems27US 4,908,833 AAmerican Telephone and Telegraph Company · 1990