Vertical cavity surface emitting laser optimized for thermal sensitivity
AssigneeFinisar Corporation
InventorJames K. Guenter
Life of this patent
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Abstract
A vertical cavity surface emitting laser (VCSEL) optimized for use in self mixing applications. The VCSEL generally includes a bottom distributed Bragg reflector (DBR) mirror formed on a substrate. An active region is formed on the bottom mirror. A top DBR mirror is formed on the active region. A trench is formed in the at least the top mirror. An aperture is oxidized into the VCSEL. At least one of the bottom DBR mirror, the top DBR mirror, the metal contacts, the trench, and/or the aperture is optimized to make the VCSEL more thermally sensitive to changes in current through the VCSEL.
Claims30
A VCSEL for use in self mixing applications, the VCSEL comprising:
- a bottom DBR mirror formed on a substrate;
- an active region formed on the bottom mirror;
- a top DBR mirror formed on the active region;
- metal contacts coupled to the active region;
- a trench formed in at least the top mirror, the trench extending through at least a portion of the bottom DBR mirror so as to make the VCSEL more thermally sensitive to changes in current through the VCSEL;
- an aperture oxidized into the VCSEL;
- and
- a dielectric layer formed on the top DBR mirror, the thickness of the dielectric layer being a multiple of an odd quarter wavelength of the beam.
A VCSEL for use in self mixing applications, the VCSEL comprising:
- a bottom DBR mirror formed on a substrate;
- an active region formed on the bottom mirror;
- a top DBR mirror formed on the active region;
- metal contacts coupled to the active region;
- a trench formed in at least the top mirror, the trench extending through at least a portion of the bottom DBR mirror so as to make the VCSEL more thermally sensitive to changes in current through the VCSEL;
- and
- an aperture oxidized into the VCSEL;
- wherein the bottom DBR mirror comprises an upper portion and a lower portion, the upper portion being disposed closer to the active region than the lower portion, the upper portion and the lower portion comprising alternating high and low index of refraction layers, the low index of refraction layers in the upper portion comprising non-binary semiconductor materials and the low index of refraction layers in the lower portion comprising binary semiconductor materials.
A VCSEL for use in self mixing applications, the VCSEL comprising:
- a bottom DBR mirror formed on a substrate;
- an active region formed on the bottom DBR mirror;
- a top DBR mirror formed on the active region;
- metal contacts coupled to the active region, the metal contacts each having a thickness, an inner diameter, and an outer diameter;
- a trench formed in at least the top DBR mirror;
- an aperture oxidized into the VCSEL,
- wherein
- the thickness of at least one of the metal contacts is less than about 1 micron;
- or
- the inner diameter of at least one of the metal contacts is at least 2 microns larger than the aperture;
- or
- the outer diameter of at least one of the metal contacts is at least about 15 microns larger than the inner diameter of the same metal contact.
A VCSEL for use in self mixing applications, the VCSEL comprising:
- a bottom DBR mirror formed on a substrate;
- an active region formed on the bottom DBR mirror;
- a top DBR mirror formed on the active region;
- metal contacts coupled to the active region;
- a trench formed in at least the top DBR mirror, the diameter of the trench being about 25 microns to decrease a thermal mass of the VCSEL;
- an aperture oxidized into the VCSEL.
Dependencies are inferred from the claim text.