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  1. Technology classes
  2. /H · Electricity
  3. /H01 · Electric elements
  4. /H01J · Electric discharge tubes or discharge lamps
  5. /H01J 2201/00 · Electrodes common to discharge tubes
  6. /H01J 2201/30 · Cold cathodes
  7. /H01J 2201/304 · Field emission cathodes
  8. /H01J 2201/30446 · Characterised by the emitter material
  9. /H01J 2201/30453 · Carbon types
  10. /H01J 2201/30465
H01J 2201/30465

Fullerenes

H01J2201/30465 (Fullerenes) appears on 3 US grants and 3 published applications in this corpus.

Search patents in H01J

Where it sits

  1. HElectricity
  2. H01Electric elements
  3. H01JElectric discharge tubes or discharge lamps
  4. H01J 2201/00Electrodes common to discharge tubes
  5. H01J 2201/30Cold cathodes
  6. H01J 2201/304Field emission cathodes
  7. H01J 2201/30446Characterised by the emitter material
  8. H01J 2201/30453Carbon types
  9. H01J 2201/30465Fullerenes
Granted patents
3
Published applications
3
Assignees
2
Inventors
6
Latest grant
18 Aug 2015

Filings by year

Granted patentsPublished applications
H01J 2201/30465: granted patents and published applications per publication year
YearGranted patentsPublished applications
200811
200900
201001
201100
201201
201300
201400
201520

20082009201020112012201320142015

By publication year.

Recent patents

  • Method of forming self-assembly and uniform fullerene array on surface of substrate18 Aug 2015US 9,109,278 B2
  • Method of forming self-assembly and uniform fullerene array on surface of substrate24 Mar 2015US 8,986,782 B2
  • Method of fabricating carbide and nitride nano electron emitters16 Dec 2008US 7,465,210 B2Samsung Electronics Co., Ltd.
  • Method of forming self-assembly and uniform fullerene array on surface of substrate12 Apr 2012US 2012/0088107 A1
  • Method of forming self-assembly and uniform fullerene array on surface of substrate28 Oct 2010US 2010/0272985 A1
  • Method of fabricating carbide and nitride nano electron emitters20 Nov 2008US 2008/0287030 A1Samsung Electronics Co., Ltd.

Most cited

By later US patents
  • Method of fabricating carbide and nitride nano electron emitters6US 7,465,210 B2Samsung Electronics Co., Ltd. · 2008
  • Method of forming self-assembly and uniform fullerene array on surface of substrate1US 8,986,782 B22015

Top assignees

Documents
  • Samsung Electronics Co., Ltd.2
  • RUThe Regents of the University of California2

Often classified with

  • B82YSpecific uses or applications of nanostructures4
  • C01BNon-metallic elements4
  • C23CCoating metallic material4
  • Y10TTechnical subjects covered by former us classification4

Documents that also carry the other class.

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