III-V compatible anti-fuses
AssigneeInternational Business Machines Corporation
InventorsPraneet Adusumilli, Alexander Reznicek, Oscar van der Straten, Chih-Chao Yang
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Abstract
An anti-fuse is provided above a semiconductor material. The anti-fuse includes a first end region including a first metal structure; a second end region including a second metal structure; and a middle region located between the first end region and the second end region. In accordance with the present application, the middle region of the anti-fuse includes at least a portion of the second metal structure that is located in a gap positioned between a bottom III-V compound semiconductor material and a top III-V compound semiconductor material. A high-k dielectric material liner separates the second metal structure from a portion of the first metal structure.
Claims13
A semiconductor structure comprising:
- an anti-fuse located above a semiconductor material, said anti-fuse comprising:
- a first end region comprising a first metal structure;
- a second end region comprising a second metal structure;
- and
- a middle region located between said first end region and said second end region, wherein said middle region of said anti-fuse comprises at least a portion of said second metal structure that is located in a gap positioned between a bottom III-V compound semiconductor material and a top III-V compound semiconductor material, and wherein a high-k dielectric material liner separates said second metal structure from a portion of said first metal structure.
Dependencies are inferred from the claim text.