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US 9,803,107 B2Granted
Polishing agent, polishing method and method for manufacturing semiconductor integrated circuit device
AssigneeAsahi Glass Company, Limited
InventorsMasaru Suzuki, Toshihiko Otsuki
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Abstract
The present invention relates to a polishing agent including: cerium oxide particles; a water-soluble polyamine; potassium hydroxide; at least one selected from an organic acid and a salt thereof; and water, in which the polishing agent has a pH of 10 or more, a polishing method using the polishing agent, and a method for manufacturing a semiconductor integrated circuit device.
Claims15
A polishing agent comprising:
- cerium oxide particles;
- a water-soluble polyamine;
- potassium hydroxide;
- at least one selected from an organic acid and a salt thereof;
- and
- water,
- wherein the polishing agent has a pH of 10 or more,
- the water-soluble polyamine is a water-soluble polyether polyamine having a weight average molecular weight of from 100 to 2,000, and
- the organic acid comprises gluconic acid or N-[tris(hydroxymethyl)methyl]glycine.
6 more elements
A polishing agent comprising:
- cerium oxide particles;
- a water-soluble polyamine;
- potassium hydroxide;
- at least one selected from an organic acid and a salt thereof;
- and
- water,
- wherein the polishing agent has a pH of 10 or more,
- the water-soluble polyamine is a water-soluble polyether polyamine having a weight average molecular weight of from 100 to 2,000, and
- an amount of the at least one selected from the organic acid and the salt thereof is from 0.001 to 2.0 mass % based on a total amount of the polishing agent.
6 more elements
Dependencies are inferred from the claim text.