Device substrate, method of manufacturing device substrate, and method of manufacturing semiconductor device

A device substrate comprising a multilayer film that is disposed on a semiconductor wafer, wherein

• a main face of the device substrate on which the multilayer film is disposed includes
• a patterning region on which a resist is to be applied, and
• a bevel region provided as a region from a peripheral edge portion of the patterning region to an end portion of the device substrate,
• the multilayer film on the patterning region includes a mask film that is an uppermost layer film of the multilayer film,
• the multilayer film on the bevel region does not include the mask film that is the uppermost layer film of the multilayer film which presents on the patterning region,
• the bevel region includes the region where an upper surface of the bevel region becomes lower toward the end portion of the device substrate relative to an upper surface of the patterning region, and
• the upper surface of the multilayer film that does not include the mask film on the bevel region has an inclination angle of 10° or more and 90° or less with respect to the upper surface of the multilayer film in which the uppermost layer film is the mask film on the patterning region, at a boundary between the patterning region and the bevel region.