Epitaxial growth apparatus

An epitaxial growth apparatus for growing an epitaxial layer on a surface of a wafer, the apparatus comprising:

• a chamber in which the wafer is housed;
• an upper lamp group that includes a plurality of heating lamps arranged in a ring and that is provided above the chamber;
• a lower lamp group that includes a plurality of heating lamps and that is provided below the chamber;
• a reflection member that has a substantially cylindrical shape and that is provided inside the ring of the upper lamp group;
• an additional reflection member that includes a reflection surface substantially parallel to the surface of the wafer and that is provided inside the reflection member;
• a pyrometer that is provided above the chamber and the center of the wafer and that has an optical axis extending toward the wafer;
• and
• a shield tube that has a cylindrical shape and that is provided in such a way as to encircle the optical axis of the pyrometer,
• wherein the reflection member is provided in such a way as to surround the optical axis of the pyrometer and the shield tube,
• the additional reflection member is provided in such a way as to close at least part of an opening of a lower end portion of the reflection member, and
• the optical axis of the pyrometer and the shield tube pass through the additional reflection member wherein inside the reflection member is a region from which any heating lamps are excluded;
• and wherein a position of the additional reflection member is higher than a position of a lower end of the reflection member.