Sputtering target for PVD chamber

A sputtering apparatus comprising:

• a chamber having a wall defining a process area including a substrate support;
• a reactive gas source connected to the chamber to provide a reactive gas during processing;
• a target spaced from the substrate support, the target having a front face defining sputterable target surface extending between peripheral edges of the target and the sputterable target surface defining an overall concave shape substantially between the peripheral edges, the overall concave shape defined by a substantially flat central region surrounded by a sloped region;
• and
• an RF power source coupled to the target to sputter material from the target,
• wherein the target comprises one or more of aluminum, titanium or tungsten and the target peripheral edges define a target diameter Rp and the flat central region has a diameter Rc, and the central region diameter is such that the ratio Rc/Rp is about 68.5%, the sloped region has an angle of about 7 degrees such that a thickness at the peripheral edge of the target is in the range of about ⅛ inch to about ¾ inch and is greater than a thickness at the central region, and the angle of the sloped region and Rc/Rp are configured to deposit a film of uniform thickness on a flat substrate surface.