Low-temperature epitaxial method for manufacturing backside field stop layer of insulated gate bipolar transistor (IGBT)
AssigneePfc Device Holdings Limited
InventorsMei-Ling Chen, Kuan-Yu Chen
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Abstract
A low-temperature epitaxial method manufactures backside field stop layer of insulated gate bipolar transistor (IGBT) first provides a first conductive type substrate and fabricates front-side elements and front metal layer on a front side of the IGBT. A second conductive type impurity layer is formed on a back side of the first conductive type substrate by low-temperature epitaxial process and a collector metal layer is formed on bottom face of the first conductive type substrate.
Claims6
A low-temperature epitaxial method for manufacturing backside field stop layer of insulated gate bipolar transistor (IGBT), the method comprising:
- (a) providing a first conductive type substrate and forming front side elements of IGBT and front side metal layer of IGBT on a front side of the first conductive type substrate;
- (b) forming a plurality of first conductive type impurity layers on a back side of the first conductive type substrate by low-temperature epitaxial process;
- (c) forming a second conductive type impurity layer on the back side of the first conductive type substrate by low-temperature epitaxial process;
- and
- (d) forming a collector metal layer med on a bottom face of the first conductive type substrate,
- wherein impurity concentrations of the first conductive type impurity layers formed in step (b) are decreased from a backside of the first conductive type substrate.
Dependencies are inferred from the claim text.