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US 9,520,458 B2Granted
Resistor formed using resistance patterns and semiconductor devices including the same
AssigneeSamsung Electronics Co., Ltd.
InventorsMyung Gil Kang, Dongwon Kim, Ilryong Kim, Changwoo Oh, Keun Hwi Cho, Toshinori Fukai
Life of this patent
Estimating the term…
Abstract
Embodiments of the inventive concepts provide a resistor and a semiconductor device including the same. The resistor includes a substrate, a device isolation layer in the substrate which defines active regions arranged in a first direction a resistance layer including resistance patterns that vertically protrude from the active regions and are connected to each other in the first direction, and contact electrodes on the resistance layer.
Claims20
A resistor comprising:
- a substrate;
- a device isolation layer in the substrate which defines active regions arranged in a first direction, the active regions respectively including active fins vertically protruding from a top surface of the device isolation layer,
- wherein respective ones of the active fins comprise a plurality of recessed regions arranged in a second direction crossing the first direction;
- an electrical resistance layer comprising electrical resistance patterns that vertically protrude from the active regions and are arranged in the first direction so as to be connected to each other, wherein respective ones of the electrical resistance patterns overlap respective ones of the recessed regions of the active fins and are not on an uppermost surface of the active fins;
- and
- contact electrodes directly in contact with the electrical resistance layer.
3 more elements
A semiconductor device comprising:
- a substrate comprising a first region and a second region;
- a device isolation layer in the substrate which defines active regions, the active regions respectively including active fins vertically protruding from a top surface of the device isolation layer, wherein the active fins are arranged in a first direction, and wherein respective ones of the active fins comprise a plurality of recessed regions arranged in a second direction crossing the first direction;
- conductive patterns intersecting the active fins;
- an electrical resistance layer comprising electrical resistance patterns that protrude from the active regions between the conductive patterns in the first region and are arranged in the first direction so as to be connected to each other, the electrical resistance layer intersecting the active regions;
- and
- contact electrodes if electrically coupled to the electrical resistance layer.
3 more elements
A semiconductor device comprising:
- a substrate;
- a device isolation layer in the substrate which defines a plurality of active regions arranged in a first direction and extending in a second direction crossing the first direction;
- a plurality of active fins on respective ones of the plurality of active regions, the plurality of active fins arranged in the first direction and extending in the second direction, wherein respective ones of the active fins comprise plurality of recessed portions arranged in the second direction;
- and
- a plurality of electrical resistance layers on the plurality of the active regions, the plurality of electrical resistance layers arranged in the second direction and extending in the first direction and further comprising:
- a plurality of electrical resistance patterns connected to one another and disposed on respective ones of the plurality of active regions,
- wherein respective ones of the plurality of electrical resistance patterns are in the recessed portions of respective ones of the plurality of active fins and are not on an uppermost surface of the respective ones of the plurality of active fins.
4 more elements
Dependencies are inferred from the claim text.