Anti-fuse structure and method for manufacturing the same

A method for manufacturing a semiconductor device, comprising:

• forming a fin extending between a first pad and a second pad on a semiconductor substrate;
• removing a central portion of the fin to create an opening between a first part of the fin extending from the first pad and a second part of the fin extending from the second pad;
• growing a first epitaxial layer in the opening on a side of the first part of the fin and growing a second epitaxial layer in the opening on a side of the second part of the fin;
• stopping the growth of the first and second epitaxial layers prior to merging of the first and second epitaxial layers;
• depositing a metal layer on the first and second pads, the first and second parts of the fin and the first and second epitaxial layers, wherein a portion of the opening remains unfilled so that there is a gap between portions of the metal layer on the first and second epitaxial layers in the opening;
• performing a silicidation process to convert the metal layer into a silicide layer;
• and
• depositing a dielectric layer on the silicide layer, wherein the dielectric layer fills in a remaining portion of the opening.