Voltage and temperature independent MIM capacitors

A method for forming a MIM (metal insulator metal) capacitor in a semiconductor device, said method comprising:

• selecting two dielectric materials including a first dielectric and a second dielectric having at least one of different temperature coefficients of capacitance and different voltage coefficients of capacitance;
• determining a desired ratio of areas of said first dielectric material to said second dielectric material that produces a capacitor that is at least one of voltage independent and temperature independent;
• and
• forming a capacitor including at least a first plate at a first device level and at least a second plate at a second device level with a capacitor dielectric therebetween, wherein said first and second plates are vertically separated and electrically isolated from each other, and wherein said capacitor dielectric includes at least one portion of said first dielectric and at least one portion of said second dielectric.

A method for forming a temperature and/or voltage independent MIM (metal insulator metal) capacitive device in a semiconductor device, said method comprising:

• selecting two dielectric materials including a first dielectric and a second dielectric having at least one of temperature coefficients of capacitance having opposite signs, and voltage coefficients of capacitance having opposite signs;
• determining a desired ratio of areas of said first dielectric material to said second dielectric material in a capacitor dielectric area that produces a capacitor that is at least one of voltage independent and temperature independent;
• and
• forming a MIM capacitive device including at least one capacitor and a capacitor dielectric adjacent a substrate, each capacitor including capacitor plates separated and electrically insulated by said capacitor dielectric, said capacitor plates including at least one first level capacitor plate and at least one second level capacitor plate, the at least one first level capacitor plate disposed between the at least one second level capacitor plate and the substrate
• wherein said capacitive device includes a total capacitor dielectric area including a first area of said first dielectric and a second area of said second dielectric, and a ratio of a first area of said first dielectric to a second area of said second dielectric, is said desired ratio.