Plasma method for reducing post-lithography line width roughness
AssigneesImec Vzw, Katholieke Universiteit Leuven, KU LEUVEN R&D
InventorsPeter De Schepper, Jean-Francois de Marneffe, Efrain Altamirano Sanchez
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Abstract
The present disclosure is related to a method for treating a photoresist structure on a substrate, the method comprising producing one or more resist structures on a substrate, introducing the substrate in a plasma reactor, and subjecting the substrate to a plasma treatment at a temperature lower than zero degrees Celsius, such as between zero and −110° C. The plasma treatment may be a H2 plasma treatment performed in an inductively coupled plasma reactor. The treatment time may be at least 30s.
Claims17
A method for treating a photoresist structure on a substrate, the method comprising:
- producing one or more resist structures on a substrate;
- introducing the substrate in a plasma reactor;
- and
- subjecting the substrate to a plasma treatment at a temperature of zero degrees Celsius or lower, and for a duration between 60 s and 180 s, to thereby limit reflow of the one or more resist structures and to limit shrinkage of a critical dimension of the one or more resist structures to between 0% and 10%.
Dependencies are inferred from the claim text.