Method, photolithography method, and method of manufacturing a semiconductor device using a pellicle film
AssigneeSamsung Electronics Co., Ltd.
InventorsSu-Young Lee, Tae-Geun Kim, Jong-Gul Doh
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AssigneeSamsung Electronics Co., Ltd.
InventorsSu-Young Lee, Tae-Geun Kim, Jong-Gul Doh
Estimating the term…
A pellicle for an EUV lithography may include a pellicle film, a supporting structure and a handling block. The pellicle film may have a first surface for orienting opposite to a mask, and a second surface opposite to the first surface and for orienting toward the mask. The pellicle film may allow the EUV, which may pass through the mask, to penetrate the pellicle film. The supporting structure may be arranged on the second surface of the pellicle film to support the pellicle film. The handling block may be arranged on the first surface of the pellicle film. The handling block may have an opening configured to expose the pellicle film. Thus, the pellicle may be handled using the thick handling block, not the thin pellicle film, so that the thin pellicle film may not be damaged. The pellicle may protect the mask from byproducts generated in the EUV lithography process so that the mask may not be contaminated.
A method, comprising:
A photolithography method comprising:
A method of manufacturing a semiconductor device, the method including:
Dependencies are inferred from the claim text.