MEMS structure having rounded edge stopper and method of fabricating the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Jen Chan, Chang-Ming Wu
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Abstract
A method of fabricating MEMS device includes forming a plurality of rounded edge trenches on a sacrificial layer over a carrier substrate. Then, formation of a polycrystalline silicon layer over the sacrificial layer to fill the trenches. A plurality of stoppers is defined by the trenches and protrudes from the polycrystalline silicon layer toward the carrier substrate Subsequently, a portion of the sacrificial layer is removed to define a recess between the polycrystalline silicon layer and a carrier substrate and expose the stoppers.
Claims18
A method of fabricating a MEMS device, comprising:
- forming a plurality of rounded edge trenches on a sacrificial layer over a carrier substrate;
- forming a polycrystalline silicon layer over the sacrificial layer to fill the trenches, wherein a plurality of stoppers are defined by the trenches and protrude from the polycrystalline silicon layer toward the carrier substrate;
- etching the polycrystalline silicon layer through to the sacrificial layer to form a plurality of vias;
- and
- removing a portion of the sacrificial layer by selective etching through the vias to define a recess between the polycrystalline silicon layer and a carrier substrate and to expose the stoppers.
Dependencies are inferred from the claim text.