Magnetic tunnel junction with superlattice barriers
AssigneeNational Taiwan University
InventorsWen-Jeng Hsueh, Chang-Hung Chen
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Abstract
A magnetic tunnel junction is provided. The magnetic tunnel junction can enhance the tunnel magnetoresistance ratio and a device including the magnetic tunnel junction. The magnetic tunnel junction includes: a pinned layer; a free layer; and a superlattice barrier, the barrier configured between the pinned layer and the free layer. The magnetic tunnel junction may be a series or parallel connection of the above-mentioned basic form. The device including a magnetic tunnel junction may be a magnetic random access memory bit cell, a magnetic tunnel junction transistor device, a magnetic field sensor, etc.
Claims6
A magnetic tunnel junction, comprising:
- a pinned layer;
- a free layer;
- and
- a superlattice barrier configured between the pinned layer and the free layer, wherein the superlattice barrier includes at least two multilayer cells and has a leftmost layer and a rightmost layer, the at least two multilayer cells are horizontally stacked, each of the at least two multilayer cells includes at least one insulator layer and at least one conductor layer, the leftmost layer is one of an insulator layer and a conductor layer, and the rightmost layer is the other one of the insulator layer and the conductor layer.
Dependencies are inferred from the claim text.