Merged source drain epitaxy

A semiconductor device fabrication process comprising:

• forming a first fin and a second fin upon a semiconductor substrate;
• forming a first partial diamond shaped volume surrounding the first fin and a second partial diamond shaped volume surrounding the second fin by growing epitaxy material from sidewalls of the first fin and from sidewalls of the second fin, respectively;
• merging the first partial diamond shaped volume and the second partial diamond shaped volume by depositing an amorphous semiconductor material upon the first partial diamond shaped volume and the second partial diamond shaped volume, and;
• crystallizing the amorphous semiconductor material on the first partial diamond shaped volume and the second partial diamond shaped volume.

A semiconductor device comprising:

• a semiconductor substrate;
• a first fin and a second fin upon the semiconductor substrate;
• a gate structure upon the first fin, the second fin, and semiconductor substrate;
• a first diamond shaped volume surrounding the first fin and a second diamond shaped volume surrounding the second fin, and;
• crystallized semiconductor material upon the first diamond shaped volume and upon the second diamond shaped volume.