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US 9,437,471 B2Granted
Shallow trench isolations and method of manufacturing the same
AssigneeUnited Microelectronics Corp.
InventorLiang-An Huang
Life of this patent
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Abstract
A method of manufacturing shallow trench isolations is provided in the present invention, which includes the steps of providing a substrate, performing a zero etch to form preliminary trenches in the substrate, performing a STI etch to the preliminary trenches to form final trenches, where the final trenches are deeper and steeper than the preliminary trenches, and filling up the final trenches with insulating material to form shallow trench isolations.
Claims6
A shallow trench isolation in a substrate, comprising:
- a substrate;
- a shallow trench isolation formed in said substrate, wherein the sidewall of said shallow trench isolation has two different slopes;
- and
- spacer portions formed in said substrate on the upper portion of said sidewall and lower than the top surface of said shallow trench isolation.
1 more element
Dependencies are inferred from the claim text.