Semiconductor device having hard mask structure and fine pattern and forming method thereof

A method for fabricating a semiconductor device, comprising:

• forming a plurality of first hard mask patterns separated by a plurality of trenches on a target layer, the plurality of first hard mask patterns and the plurality of trenches extending in a first direction;
• forming a plurality of second hard mask patterns filling the plurality of trenches;
• forming a plurality of first sacrificial patterns extending in a second direction that crosses the first direction;
• forming a plurality of first opening units by etching the plurality of second hard mask patterns using the plurality of first sacrificial patterns and the plurality of first hard mask patterns as an etch mask;
• forming a plurality of second sacrificial patterns by filling the plurality of first opening units and filling spaces between each of the plurality of first sacrificial patterns;
• forming a plurality of second opening units by etching the plurality of first hard mask patterns and the plurality of first sacrificial patterns using the plurality of second sacrificial patterns and the plurality of second hard mask patterns as an etch mask;
• removing the plurality of second sacrificial patterns;
• and
• forming a plurality of hole patterns by etching the target layer under the plurality of first opening units and the plurality of second opening units,
• wherein a width of each of the plurality of first opening units is substantially equal to a width spacing apart the plurality of second opening units, and a width of each of the plurality of second opening units is substantially equal to a width spacing apart the first opening units.

A method for fabricating a semiconductor device, comprising:

• forming a plurality of first hard mask patterns separated by a plurality of trenches on a target layer, the plurality of first hard mask patterns and the plurality of trenches extending in a first direction;
• forming a plurality of second hard mask patterns filling the plurality of trenches;
• forming a plurality of first sacrificial patterns extending in a second direction that crosses the first direction;
• forming a plurality of first opening units by etching the plurality of second hard mask patterns using the plurality of first sacrificial patterns and the plurality of first hard mask patterns as an etch mask, the plurality of first opening units being spaced apart by a first interval in the first direction and being spaced apart by a second interval in the second direction;
• forming a plurality of second sacrificial patterns by filling the plurality of first opening units and filling spaces between the plurality of first sacrificial patterns;
• forming a plurality of second opening units by etching the plurality of first hard mask patterns and the plurality of first sacrificial patterns using the plurality of second sacrificial patterns and the plurality of second hard mask patterns as an etch mask, the plurality of second opening units being spaced apart by a third interval in the first direction and being spaced apart by a fourth interval in the second direction;
• removing the plurality of second sacrificial patterns;
• and
• forming a plurality of hole patterns by etching the target layer under the plurality of first opening units and the plurality of second opening units,
• wherein a width of each of the plurality of first opening units is substantially equal to a width of the third interval and a width of the fourth interval, and a width of each of the plurality of second opening units is substantially equal to a width of the first interval and a width of the second interval.