Methods for etching substrate and semiconductor devices
AssigneeIndustry-Academic Cooperation Foundation, Yonsei University
InventorsJungwoo Oh, Yunwon Song, Bugeun Ki, Keorock Choi
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Abstract
A method of etching a substrate using a metal-assisted chemical etching process is provided. The method may include forming a metal catalytic layer to a predetermined thickness on a substrate and reacting the metal catalytic layer with the etching solution to form a porous surface in the metal catalytic layer and etch the substrate. When the metal catalytic layer is reacted with an etching solution, a porous surface may be formed on the metal catalytic layer.
Claims9
A method of etching a substrate using a metal-assisted chemical etching process, the method comprising:
- forming a metal catalytic layer to have a thickness greater than 3 nm and less than 10 nm on a substrate;
- and
- reacting the metal catalytic layer with the etching solution to form a porous surface in the metal catalytic layer and etch the substrate,
- wherein a plurality of pin holes of the porous surface are formed in the metal catalytic layer, the plurality of pin holes being formed by the reaction with the etching solution, and
- wherein the pin holes are formed in the metal catalytic layer to have a density of 1-300 ea/μm2.
A semiconductor device, comprising:
- a substrate;
- and
- a metal catalytic layer on the substrate, the metal catalytic layer being provided to have a thickness greater than 3 nm and less than 10 nm, the metal catalytic layer having a porous surface,
- wherein a plurality of pin holes of the porous surface are formed in the metal catalytic layer, the plurality of pin holes being formed by the reaction with the etching solution to have a density of 1-300 ea/μm2.
Dependencies are inferred from the claim text.