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US 9,436,101 B2Granted
Optical arrangement and microlithographic projection exposure apparatus including same
AssigneeCarl Zeiss SMT GmbH
InventorsArmin Schoeppach, Hans-Juergen Mann, Frank Eisert, Yim-Bun Patrick Kwan
Life of this patent
Estimating the term…
Abstract
An optical arrangement includes at least one optical element and a support element for the optical element. The optical element and the support element are connected together by way of at least three decoupling elements. The decoupling elements are formed monolithically with the optical element and with the support element.
Claims27
An optical arrangement, comprising:
- an optical element having outer circumference in a plane that extends in a radial direction of the optical element;
- a support element in the plane, the support element being outside of the outer circumference of the optical element in the plane;
- and
- at least three decoupling elements connecting the optical element and the support element,
- wherein:
- the optical element, the support element and the at least three decoupling elements are monolithic;
- the optical element has a ratio of a maximum diameter to a maximum thickness of at least 10;
- a natural frequency of the optical arrangement is at least 250 Hz;
- and
- the optical arrangement is configured to be used in a microlithographic projection exposure apparatus.
7 more elements
An apparatus, comprising:
- an illumination system;
- and
- a projection objective,
- wherein the illumination system and/or the projection objective comprises an optical arrangement, comprising:
- a mirror having outer circumference in a plane that extends in a radial direction of the mirror;
- a support element in the plane, the support element being outside of the outer circumference of the mirror in the plane;
- and
- at least three decoupling elements that connect the mirror and the support element, and
- wherein:
- the mirror, the support element and the decoupling elements are monolithic;
- the mirror has a ratio of a maximum diameter to a maximum thickness of at least 10;
- and
- the apparatus is an EUV microlithographic projection exposure apparatus.
10 more elements
Dependencies are inferred from the claim text.