Stripping solution for photolithography and pattern formation method
AssigneeTokyo Ohka Kogyo Co., Ltd.
InventorsNaohisa Ueno, Daijiro Mori, Takayuki Haraguchi
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Abstract
A stripping solution for photolithography which can effectively strip away residual materials of a photoresist pattern and etching residual materials, and has excellent anticorrosion properties on SiO2 and a variety of metal materials; and a method for forming a pattern using the stripping solution. A prescribed basic compound is used as a counter amine of the hydrofluoric acid contained in the stripping solution for photolithography, and the stripping solution for photolithography is adjusted to a pH measured at 23° C. of not more than 6.0 or 8.5 or more.
Claims10
A stripping solution for photolithography comprising (A) hydrofluoric acid, (B) a basic compound represented by the following general formula (b-1), and (C) water, and having a pH at 23° C. of not more than 6.0, or 8.5 or more:
- wherein
- R1b to R5b each independently represent a hydrogen atom or an alkyl group having from 1 to 6 carbon atoms, which may be substituted with a hydroxyl group, a carboxyl group, an amino group, or a phosphonic acid group, provided that at least one of R1b to R5b represents a hydrogen atom, and one of R1b to R4b may bind with R5b to form a ring structure;
- Y1b and Y2b each independently represent an alkylene group having from 1 to 3 carbon atoms;
- n is an integer of from 1 to 5;
- and
- when n is 2 or greater, a plurality of R5bs may be the same as or different from each other, a plurality of Y1bs may be the same as or different from each other, and R5bs may bind with each other to form a ring structure, wherein a content of (B) the basic compound in the stripping solution is from 0.01 to 2.00% by mass.
A stripping solution for photolithography comprising (A) hydrofluoric acid, (B) a basic compound represented by the following general formula (b-1), and (C) water and having a pH at 23° C. of not more than 6.0 or 8.5 or more:
- wherein
- R1b to R5b each independently represent a hydrogen atom or an alkyl group having from 1 to 6 carbon atoms, which may be substituted with a hydroxyl group, a carboxyl group, or an amino group, provided that at least one of R1b to R5b represents a hydrogen atom, and one of R1b to R4b may bind with R5b to form a ring structure;
- Y1b and Y2b each independently represent an alkylene group having from 1 to 3 carbon atoms;
- n is an integer of from 1 to 5;
- and
- when n is 2 or greater, a plurality of R5bs may be the same as or different from each other, a plurality of Y1bs may be the same as or different from each other, and R5bs may bind with each other to form a ring structure, and
- a content of (B) the basic compound in the stripping solution is from 0.01 to 2.00% by mass.
Dependencies are inferred from the claim text.