Patterning method using surface plasmon

A method of foming a pattern, comprising:

• forming a first photoresist layer on a substrate;
• forming a metal pattern on the first photoresist layer, the metal pattern in which a plurality of lines having predetermined linewidth and thickness are spaced apart from each other at a predetermined distance, wherein the metal pattern comprises a thin film portion between the lines adjacent to each other;
• exciting surface plasmons in the metal pattern by light irradiation to expose the first photoresist layer to have a first pattern shape;
• forming a first photoresist pattern by removing the metal pattern and developing the first photoresist layer;
• depositing a pattern-forming material on the first photoresist pattern and the substrate;
• and
• removing the first photoresist pattern.

A method of foming a pattern in an etching target material layer, comprising:

• providing a substrate;
• forming the etching target material layer on the substrate;
• forming a first photoresist layer on the etching target material layer;
• forming a metal pattern on the first photoresist layer, the metal pattern including a plurality of first line portions and a plurality of second line portions alternately arranged, each first line portion having a first thickness and having a first linewidth, and each second line portion having a second thickness that is smaller than the first thickness, having a second linewidth and occupying a space between adjacent first line portions;
• exposing a first pattern shape in the first photoresist layer by exciting surface plasmons in the metal pattern by exposure to light irradiation;
• forming a first photoresist pattern corresponding to the first pattern shape in the first photoresist layer by removing the metal pattern and developing the first photoresist layer;
• and
• forming the pattern in the etching target material layer by etching the etching target material layer by using the first photoresist pattern as an etch mask.