Method for a low profile etchable EUV absorber layer with embedded particles in a photolithography mask

A photolithography mask comprising:

• a ruthenium (Ru) capped multilayer reflector (MLR);
• first and second layers of a first extreme ultraviolet (EUV) absorbing material over the Ru capped MLR, the second layer being between the first layer and the Ru cap;
• and
• particles of a second EUV absorbing material implanted into the first layer,
• wherein the first EUV absorbing material is etchable and has a lower EUV absorption coefficient than the second EUV absorbing material, and
• wherein the implanted particles are substantially separated from each other.

A method comprising:

• forming a ruthenium (Ru)-capped multilayer reflector (MLR);
• forming first and second layers of a tantalum (Ta) based material over the MLR, the second layer being between the first layer and the Ru cap;
• and
• implanting the first layer with nickel (Ni), cobalt (Co), silver (Ag), indium (In), tellurium (Te), or platinum (Pt) nanoparticles, wherein the implanted Ni nanoparticles are substantially separated from each other and have a higher extreme ultraviolet (EUV) absorption coefficient than the Ta-based material in the first layer.